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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION *With TO-220F package *Low collector saturation voltage APPLICATIONS *High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -5 -8 30 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1308 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -100 V VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.15A -0.4 V VBEsat Base-emitter saturation voltage IC=-3A;IB=-0.15A -1.2 V A ICBO Collector cut-off current VCB=-100V;IE=0 -1 IEBO Emitter cut-off current VEB=-7V; IC=0 -1 A hFE-1 DC current gain IC=-1A ; VCE=-1V 70 240 hFE-2 DC current gain IC=-3A ; VCE=-1V 30 fT Transition frequency IC=-1A ; VCE=-4V 60 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1308 Fig.2 Outline dimensions 3 |
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